Fabrication and optical characterization of GaN quasi-phase matching crystal by double polarity selective area growth in metal organic vapor phase epitaxy

The fabrication of ultra-violet (UV) second-harmonic generation (SHG) (UV-SHG) devices requires GaN quasi-phase matching (GaN-QPM) crystals with periodically arranged polar GaN. For fabricating GaN-QPM crystals, the double polarity selective area growth (DP-SAG) using carbon mask technique is employed. However, the growth of narrow (2–4 [Formula: see text]m) pitch pattern GaN-QPM crystals, which is necessary for UV-SHG devices, has not been reported using this technique. Herein, we report the successful fabrication of 4 [Formula: see text]m pitch pattern GaN-QPM. We fabricated a thick GaN-QPM crystal at the optimized V/III ratio. Through optical characterization, we observed SHG generation from the GaN-QPM crystal fabricated using DP-SAG.