Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

捷克先令 锌黄锡矿 材料科学 密度泛函理论 纳米晶 带隙 能量转换效率 太阳能电池 光电子学 纳米技术 化学 计算化学
作者
Sachin R. Rondiya,Yogesh Jadhav,Aleksandar Živković,Sagar B. Jathar,Ganesh K. Rahane,Russell W. Cross,Avinash Rokade,Rupesh S. Devan,Sadhu Kolekar,Robert L. Z. Hoye,Hirendra N. Ghosh,Nora H. de Leeuw,Sandesh Jadkar,Nelson Y. Dzade
出处
期刊:Journal of Alloys and Compounds [Elsevier BV]
卷期号:890: 161575-161575 被引量:17
标识
DOI:10.1016/j.jallcom.2021.161575
摘要

The Earth-abundant kesterite Cu2ZnSnS4 (CZTS) exhibits outstanding structural, optical, and electronic properties for a wide range of optoelectronic applications. However, the efficiency of CZTS thin-film solar cells is limited due to a range of factors, including electronic disorder, secondary phases, and the presence of anti-site defects, which is a key factor limiting the Voc. The complete substitution of Zn lattice sites in CZTS nanocrystals (NCs) with Cd atoms offers a promising approach to overcome several of these intrinsic limitations. Herein, we investigate the effects of substituting Cd2+ into Zn2+ lattice sites in CZTS NCs through a facile solution-based method. The structural, morphological, optoelectronic, and power conversion efficiencies (PCEs) of the NCs synthesized have been systematically characterized using various experimental techniques, and the results are corroborated by first-principles density functional theory (DFT) calculations. The successful substitution of Zn by Cd is demonstrated to induce a structural transformation from the kesterite phase to the stannite phase, which results in the bandgap reduction from 1.51 eV (kesterite) to 1.1 eV (stannite), which is closer to the optimum bandgap value for outdoor photovoltaic applications. Furthermore, the PCE of the novel Cd-substituted liquid junction solar cell underwent a four-fold increase, reaching 1.1%. These results highlight the importance of substitutional doping strategies in optimizing existing CZTS-based materials to achieve improved device characteristics.
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