偏心因子
表征(材料科学)
带隙
结晶学
材料科学
化学
纳米技术
光电子学
作者
Ruihuan Duan,Pengfei Liu,Hua Lin,Shangxiong Huangfu,Li‐Ming Wu
出处
期刊:Dalton Transactions
[Royal Society of Chemistry]
日期:2017-01-01
卷期号:46 (43): 14771-14778
被引量:26
摘要
Three new sulfides with large band gaps, NCS Ba4Ga4SnS12, CS Ba12Sn4S23 and Ba7Sn3S13 were synthesized for the first time. Ba4Ga4SnS12 exhibits a desired balance between the band gap (2.90 eV) and the SHG intensity (34 × KDP).
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