Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

半导体 纳米材料 材料科学 带隙 纳米技术 纳米尺度 光子学 合金 光电子学 工程物理 冶金 物理
作者
Cun‐Zheng Ning,Letian Dou,Peidong Yang
出处
期刊:Nature Reviews Materials [Nature Portfolio]
卷期号:2 (12) 被引量:351
标识
DOI:10.1038/natrevmats.2017.70
摘要

Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II–VI and III–V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells. Nanoscale semiconductor materials have large tolerance to lattice mismatches, which enables an almost arbitrary control of alloy composition and bandgap energy. In this Review, semiconductor alloy nanomaterials are examined, and their synthesis, properties and potential for applications — such as lasers, solid-state lighting and solar cells — are discussed.
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