Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

The influence of the O₂ flow rate on the properties of gallium oxide (Ga₂O₃) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga₂O₃ thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga₂O₃ samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga₂O₃ materials could be obtained by adjusting the oxygen flow rate.