材料科学
渗透(认知心理学)
共价键
电荷(物理)
渗流理论
可变距离跳频
密度泛函理论
化学物理
半导体
纳米技术
数码产品
分子
分子电子学
电子结构
电导率
计算化学
光电子学
化学
热传导
物理
有机化学
物理化学
复合材料
神经科学
生物
量子力学
作者
Stefano Ippolito,Francesca Urban,Wenhao Zheng,Onofrio Mazzarisi,Cataldo Valentini,Adam G. Kelly,Sai Manoj Gali,Mischa Bonn,David Beljonne,Federico Corberi,Jonathan N Coleman,Hai Wang,Paolo Samorì
标识
DOI:10.1002/adma.202211157
摘要
Device performance of solution-processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge-transport properties in such systems have not been systematically researched. Here, the charge-transport mechanisms of printed devices based on covalent MoS2 networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature-dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π-conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge-transport properties in MoS2 devices based on covalent networks are provided.
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