光电子学
亚稳态
材料科学
碲化镉光电
兴奋剂
可靠性(半导体)
重组
化学
纳米技术
活化能
电压
光致发光
冠军
作者
Jinjie Wu,Yanjie Gan,Jiao Liu,Yu Su,Yiliang Zhou,Meixiu Wan,Hongbing Zhu,Fei Guo,Ganhua Fu,Yaohua Mai,Kai Shen
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2025-12-12
卷期号:11 (1): 573-580
被引量:3
标识
DOI:10.1021/acsenergylett.5c03194
摘要
Metastable responses to illumination, temperature, electrical bias, and exposure history complicate the performance assessment and reliability in CdTe thin-film photovoltaics. Here, we demonstrate a synergistic light–heat–bias (L–H–B) activation that reproducibly boosts the performance of graded CdSeTe devices. L–H–B suppresses nonradiative recombination at the illuminated front interface and within the absorber, coincident with deactivation of dominant shallow traps near E V + 0.35 eV and reduced occupancy of midgap states around E V + 0.76–0.79 eV. These changes mitigate defect-mediated Shockley–Read–Hall losses and increase open-circuit voltage and fill factor, yielding a champion efficiency of 21.02%─among the highest reported for CdSeTe thin-film solar cells. Specifically, the response is reversible after dark storage, recoverable upon reactivation, and not Cu-specific, generalizing to group-V-doped devices. The protocol provides an operational, standardizable preconditioning route for performance activation and reliable benchmarking.
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