极化
铁电性
量子隧道
材料科学
序列(生物学)
隧道枢纽
凝聚态物理
光电子学
化学
物理
电介质
生物化学
作者
Yongqi Ruan,Qi Zhang,Michael Lord,Yizhong Guo,Jinzhao Wang,Jiaolian Liu,Zhijun Ma,Peng Zhou,Tianjin Zhang,Nagarajan Valanoor
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2022-10-18
卷期号:4 (11): 5171-5176
标识
DOI:10.1021/acsaelm.2c01131
摘要
The current–voltage (I–V) characteristics and ON/OFF ratio in hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) were investigated under different poling sequences. When −5 V poling pulse is applied prior to +5 V pulse (−5 V-poling-first operation), both ON-state and OFF-state show relatively low currents, whereas the ON/OFF ratio is more than doubled, as compared to the reverse poling sequence (+5 V-poling-first operation, i.e., + 5 V pulse applied prior to −5 V). Interestingly, the ON-state I–V curves exhibit the Ohmic behavior, while the OFF-state curves are nonlinear that can be described by direct tunneling across a barrier, regardless of the poling sequence. The poling sequence-dependent tunneling electroresistance in our FTJs is explained by the evolution of domain structure in the ferroelectric films driven by the poling pulse, as supported by both I–V measurements and data fitting. This work provides a guidance to modulate the performance of FTJs, and further help understand the structure–property relationship of HfO2-based ferroelectric memories at the nanoscale.
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