复合数
可靠性(半导体)
材料科学
铝
接头(建筑物)
碳化硅
可靠性工程
功率(物理)
冶金
复合材料
工艺工程
工程类
结构工程
物理
量子力学
作者
Chuantong Chen,Fupeng Huo,Kazutaka Takeshita,Hiroaki Miyake,Katsuaki Suganuma
标识
DOI:10.23919/icep-iaac64884.2025.11002880
摘要
This study is to create a new die-attach bonding materials that are capable of meeting the rigorous demands of next-generation SiC power semiconductors. A composite sintering paste composed of silver-aluminum (Ag-Al) particles was proposed for bonding SiC to the DBC substrate, leveraging the low elastic modulus and high plastic deformability of Al particles. The joint structure was evaluated during a high temperature aging test at 300°C and a power cycling test with the junction temperature of 200°C. Compared to the silver sintered structure, the Ag-Al sintered joint exhibits superior structural stability during high-temperature aging and better long-term reliability during power cycling.
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