(012) Preferred Orientation of LiNbO3 Thin Films by RF-Magnetron Sputtering

LiNbO 3 films were prepared by an rf-magnetron sputtering technique using a sintered LiNbO 3 target containing potassium. The addition of potassium to the target enhances the mobility of the sputtered materials, through the re-evaporation of the potassium on the surface of the substrate during crystallization of the growth of the LiNbO 3 . The enhanced mobility enables the growth of a LiNbO 3 film with a minimum surface energy structure without effect from the underlying layer. The rf power, working pressure, and substrate temperature were selected as process variables to investigate any changes in the preferred orientation of LiNbO 3 . (012) preferred oriented films were fabricated within a deposition rate range from 25 Å/min to 50 Å/min. (012) preferred orientation of LiNbO 3 film is due to the minimum surface energy of (012) plane.