石墨烯
材料科学
热传导
热导率
共价键
化学物理
热的
热接触电导
工作(物理)
分子动力学
电导
费米能级
空位缺陷
凝聚态物理
纳米技术
热阻
复合材料
计算化学
热力学
化学
电子
有机化学
物理
量子力学
作者
Xiangjun Liu,Junfeng Gao,Gang Zhang,Yong‐Wei Zhang
出处
期刊:Nano Research
[Springer Science+Business Media]
日期:2017-03-27
卷期号:10 (9): 2944-2953
被引量:69
标识
DOI:10.1007/s12274-017-1504-8
摘要
Recent studies showed that the in-plane and inter-plane thermal conductivities of two-dimensional (2D) MoS2 are low, posing a significant challenge in heat management in MoS2-based electronic devices. To address this challenge, we design the interfaces between MoS2 and graphene by fully utilizing graphene, a 2D material with an ultra-high thermal conduction. We first perform ab initio atomistic simulations to understand the bonding nature and structure stability of the interfaces. Our results show that the designed interfaces, which are found to be connected together by strong covalent bonds between Mo and C atoms, are energetically stable. We then perform molecular dynamics simulations to investigate the interfacial thermal conductance. It is found surprisingly that the interface thermal conductance is high, comparable to that of graphene-metal covalent-bonded interfaces. Importantly, each interfacial Mo-C bond serves as an independent thermal channel, enabling the modulation of interfacial thermal conductance by controlling Mo vacancy concentration at the interface. The present work provides a viable route for heat management in MoS2 based electronic devices.
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