Anatase TiO2 thin films were deposited in a d.c. reactive magnetron sputtering system. It was found that there is a strong dependence between anatase-rutil structures of TiO2 films and the technological conditions, the most relevant parameter being the oxygen percentage from the argon and oxygen mixture. Our measurements carried out for electrical properties of d.c. magnetron sputtering TiO2 thin films revealed that it is possible to obtain TiO2 films with controllable structure and properties.