Experimeatal Study on MOSFET under Irradiation Condition

Custom test chips including NMOS and PMOS devices were tested after irradiated by ~(60)Coγ-ray.The threshold voltage shift induced by irradiation was studied based on the test results.Both NMOS and PMOS threshold voltages shifted negatively and the shifts were much lager when the device gates biased during irradiation than none biased.The difference of W/L showed no influence on the threshold voltage shift.