Increased Breakdown Voltage and robustness of Embedded power module

In this paper, a study of the influence of an etching on the electric field and the shear stress distribution is presented. A 100 V embedded PCB half-bridge, named VESA1, has been developed and realized by VEDECOM Institute. The study focuses on increasing the breakdown voltage from 100 V to 800 V. The proposed solution is based on the optimization of the copper plate etching in terms of positioning and sizing. A numerical approach using 2D electrical and thermomechanical simulations has shown that aligning the etching on the die and increasing the width of the etches, allow to attenuate the maximum values of the electric field and to reduce the thermomechanical stresses within the assembly. The first steps of the etching process have been performed to validate the manufacturing process.