三卤化物
甲脒
锡
钙钛矿(结构)
图层(电子)
化学
原子层沉积
无机化学
氧化物
铅(地质)
氧化锡
材料科学
卤化物
结晶学
有机化学
地质学
地貌学
作者
Bhavya Rakheja,Adam Hultqvist,Rahul Mahavir Varma,Natalia M. Martin,Karen Radetzky,Stefania Riva,Evelyn Johannesson,Ute B. Cappel,Håkan Rensmo,Erik M. J. Johansson,Tobias Törndahl
标识
DOI:10.1021/acsaem.5c00968
摘要
Tin oxide (SnO x ) by atomic-layer deposition (ALD), in combination with fullerene, is widely employed as an electron transport layer in p-i-n perovskite solar cells. This study investigates the direct deposition of ALD SnO x on top of formamidinium (FA)-based perovskites, as a step toward the elimination of the fullerene interlayer and its poor effect on solar cell's long-term stability. The interfacial chemistry between FA-based perovskites (FAPbI3 and FAPbBr3) and ALD SnO x was studied using soft and hard X-ray photoelectron spectroscopy (SOXPES and HAXPES) with a focus on investigating the separate roles FA and different halides play during interface formation. FAPbI3 and FAPbBr3 solar cell structures solely containing ALD SnO x resulted in s-shaped current-voltage characteristics, indicating the formation of a transport barrier at the interface. Both SOXPES and HAXPES measurements revealed the emergence of additional nitrogen states at the interface during the ALD SnO x deposition on FAPbI3 and FAPbBr3, where these states are linked to the decomposition of FA+. The FAPbI3/ALD SnO x interface also showed the presence of lead iodide (PbI2) through additional lead states other than that from FAPbI3 by using SOXPES measurements. Concerning the FAPbBr3/ALD SnO x interface, no additional lead states were observed; however, measurements instead revealed the formation of Sn-Br bonds at the interface along with the migration of bromine ions into the bulk of the ALD SnO x . Thus, FAPbI3 and FAPbBr3 undergo distinct reaction pathways upon direct deposition of ALD SnO x on top of them. We reason that the decomposition of FA+ in both perovskites and the formation of PbI2 at the FAPbI3/ALD SnO x interface and the incorporation of Br in SnO x at the FAPbBr3/ALD SnO x interface prove detrimental toward device performance. Therefore, careful interfacial engineering that can mitigate the formation of these products should be utilized to enhance the performance of perovskite solar cells.
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