Solution-Obtained (NH4)3In0.95Sb0.05Cl6 with High External Photoluminescence Quantum Yield and Excellent Antiquenching Properties

The efficient broad-band emission from low-dimensional metal halides has garnered significant interest. However, most of these materials exhibit poor stability at the operating temperature of light-emitting diodes. In this study, using the solution method (temperature lower than 90 °C), a new compound (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 was obtained with the structure in the Pnma space group featuring unit-cell parameters of a = 12.3871(4) Å, b = 24.9895(9) Å, and c = 7.7844(3) Å. (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 can be prepared by doping (NH 4 ) 2 InCl 5 ·H 2 O when the Sb 3+ feeding ratio is in the range of 30–80%. Thermal analysis reveals that (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 is stable up to 320 °C. (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 exhibits broad-band yellow-white emission with extremely high internal and external photoluminescence quantum yields of 93 and 77%, respectively. Interestingly, (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 displays remarkable resistance to thermal quenching, retaining 83% of its initial photoluminescence intensity at 80 °C. A white light-emitting diode is fabricated by combining (NH 4 ) 3 In 0.95 Sb 0.05 Cl 6 with a commercial phosphor, and a high color rendering of 92.8 was obtained. This work presents an environmentally friendly, efficient, stable UV-excited broad-band emission material for potential solid-state lighting applications.