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In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskite

甲脒 钙钛矿(结构) 材料科学 原子层沉积 卤化物 光谱学 化学工程 无机化学 图层(电子) 分析化学(期刊) 纳米技术 化学 有机化学 量子力学 物理 工程类
作者
Andrea Bracesco,Jarvi W. P Jansen,Haibo Xue,Valerio Zardetto,Geert Brocks,W. M. M. Kessels,Shuxia Tao,Mariadriana Creatore
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:15 (31): 38018-38028 被引量:33
标识
DOI:10.1021/acsami.3c05647
摘要

High Resolution Image Download MS PowerPoint Slide Perovskite photovoltaics has achieved conversion efficiencies of 26.0% by optimizing the optoelectronic properties of the absorber and its interfaces with charge transport layers (CTLs). However, commonly adopted organic CTLs can lead to parasitic absorption and device instability. Therefore, metal oxides like atomic layer-deposited (ALD) SnO 2 in combination with fullerene-based electron transport layers have been introduced to enhance mechanical and thermal stability. Instead, when ALD SnO 2 is directly processed on the absorber, i.e., without the fullerene layer, chemical modifications of the inorganic fraction of the perovskite occur, compromising the device performance. This study focuses on the organic fraction, particularly the formamidinium cation (FA + ), in a CsFAPb(I,Br) 3 perovskite. By employing in situ infrared spectroscopy, we investigate the impact of ALD processing on the perovskite, such as vacuum level, temperature, and exposure to half and full ALD cycles using tetrakis(dimethylamido)-Sn(IV) (TDMA-Sn) and H 2 O. We observe that exposing the absorber to vacuum conditions or water half-cycles has a negligible effect on the chemistry of the perovskite. However, prolonged exposure at 100 °C for 90 min results in a loss of 0.7% of the total formamidinium-related vibrational features compared to the pristine perovskite. Supported by density functional theory calculations, we speculate that FA + deprotonates and that formamidine desorbs from the perovskite surface. Furthermore, the interaction between TDMA-Sn and FA + induces more decomposition of the perovskite surface compared to vacuum, temperature, or H 2 O exposure. During the exposure to 10 ALD half-cycles of TDMA-Sn, 4% of the total FA + -related infrared features are lost compared to the pristine perovskite. Additionally, IR spectroscopy suggests the formation and trapping of sym -triazine, i.e., a decomposition product of FA + . These studies enable to decouple the effects occurring during direct ALD processing on the perovskite and highlight the crucial role of the Sn precursor in affecting the perovskite surface chemistry and compromising the device performance.
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