材料科学
单层
兴奋剂
扫描隧道显微镜
石墨烯
光电发射光谱学
异质结
化学吸附
分子束外延
外延
范德瓦尔斯力
光电子学
纳米技术
凝聚态物理
X射线光电子能谱
图层(电子)
分子
化学
物理化学
物理
核磁共振
吸附
有机化学
作者
Jonathan Bradford,Kazi A. Rahman,James S. Felton,Tin S. Cheng,Mustaqeem Shiffa,Peter H. Beton,Alex Saywell,M. T. Greenaway,С. В. Новиков,James N. O’Shea,A. Patanè
出处
期刊:2D materials
[IOP Publishing]
日期:2024-12-11
卷期号:12 (1): 015019-015019
标识
DOI:10.1088/2053-1583/ad9d57
摘要
Abstract Owing to their atomically thin nature, structural defects in two-dimensional materials often play a dominating role in their electronic and optical properties. Here, we grow epitaxial GaSe monolayers on graphene/SiC by molecular beam epitaxy and characterise the layers by in situ scanning tunnelling microscopy and angle-resolved photoemission spectroscopy extracted from k -resolved photoemission electron microscopy mapping. We identify an electric dipole at the GaSe/graphene interface, with electrons accumulating on the GaSe, that cannot be compensated by p-type doping through the creation of defects formed by annealing in ultrahigh vacuum. Additionally, we demonstrate that both as-grown and defective GaSe layers are remarkably resilient to oxidation in a pure O 2 environment, and chemisorption of O 2 molecules on the surface can effectively electronically neutralise the doping in the layer. This work demonstrates the robust interlayer interaction in the GaSe/graphene van der Waals heterostructure and the role of defects on the doping for nanoelectronics.
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