光学
消光比
插入损耗
横模
干涉测量
绝缘体上的硅
分路器
多模光纤
横截面
材料科学
极化(电化学)
带宽(计算)
硅
物理
光电子学
光纤
波长
电信
激光器
物理化学
化学
工程类
结构工程
计算机科学
作者
Haibo Liang,Richard Soref,Jianwei Mu
出处
期刊:Applied Optics
[Optica Publishing Group]
日期:2019-05-17
卷期号:58 (15): 4070-4070
被引量:9
摘要
The difference between transverse electric (TE) and transverse magnetic (TM) mode-effective indices in a wave-guided angled multimode interferometer structure is found to produce practical polarization splitting (PS) in the silicon-on-insulator platform at 1550 nm. Simulations show that this PS offers competitive performance in low insertion loss (0.4 dB for TE and 0.8 dB for TM), high extinction ratio (ER) (27.6 dB for TE and 26.5 dB for TM), low cross talk (-27.3 dB for TE and -28.0 dB for TM), and a 53-nm bandwidth for ER>20 dB. The compact footprint (∼25 μm2), the identical single-mode input/output waveguides for integration without altering the cross section, and the simplicity in implementation are prominent advantages compared with prior art designs.
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