High-Performance Organic Electrochemical Transistors with Nanoscale Channel Length and Their Application to Artificial Synapse

Organic electrochemical transistors (OECTs) have attracted considerable interests for various applications ranging from biosensors to digital logic circuits and artificial synapses. However, the majority of reported OECTs utilize large channel length up to several or several tens of micrometers, which limits the device performance and leads to low transistor densities. Here, we demonstrate a new design of vertical OECT architecture with a nanoscale channel length down to ∼100 nm. The devices exhibit a high on-state current of over 20 mA under a low bias voltage of 0.5 V, a fast transient response of less than 300 μs, and an extraordinary transconductance up to 68.88 mS, representing a record-high value for OECTs. The excellent electrical performance is attributed to the novel structure with a nanoscale channel length defined by the channel material thickness, which is intrinsically different from that of conventional OECTs with the channel length limited by the lithography resolution. Owing to the low thermal budget, we fabricate flexible devices on a flexible substrate, which exhibit unprecedented endurance characteristics and mechanical robustness after 1000 blending cycles. Furthermore, the proposed device is capable of mimicking biological inhibitory synapses for application in intelligent artificial neural networks. Our work not only pushes the performance limit of OECTs but also opens up a new design of OECTs for high-performance biosensors, digital logic, and neuromorphic devices.