DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification

We present a comprehensive investigation into DSA materials and process development for P24 EUV lithography with the objective of mitigating DSA defects and enhancing the smoothness of DSA-defined patterns. We conduct a comparative assessment of the quality of DSA-rectified patterns between PS-b-PMMA and high Chi BCP. Furthermore, we explore resist planforms other than CAR for creating DSA guiding patterns.