MBM-4000 multibeam mask writer enabling mask fabrication for a new era

We have released a multi-beam mask writer MBMTM-4000 for the technology node A14 where high-NA introduction is expected. MBM-4000 is designed with patterning resolution enhancement, which is achieved by the adoption of the 10 nm beam size and the refined optics, in mind. To maintain the writing time contrary to the small beam size, the beam current density is increased to 4.2 A/cm². A large beam current may impact on the patterning resolution and the writing accuracy, and thus we employ measures such as the Coulomb blur reduction system and the CD corrections for the resist thermal effect. The charge effect reduction (CER) system has been upgraded to reduce further beam position errors caused by the resist charging. Effectiveness of these features were verified by the writing tests. The writing test of MBM-4000 confirmed that MBM-4000 have met its writing accuracy specification, and achieved LCDU of 0.41 nm (3) and global position accuracy of 0.93 nm (3σ).