材料科学
低聚物
拉曼光谱
纳米线
单体
纳米颗粒
纳米技术
二聚体
平版印刷术
各向同性腐蚀
硅
表面增强拉曼光谱
胶体金
蚀刻(微加工)
拉曼散射
光电子学
聚合物
高分子化学
图层(电子)
光学
有机化学
化学
复合材料
物理
作者
Theresa Bartschmid,Johannes Menath,Lukas J. Roemling,Nicolas Vogel,Furkan Atalay,Amin Farhadi,Gilles R. Bourret
标识
DOI:10.1021/acsami.4c10004
摘要
We report the synthesis of vertically aligned silicon nanowire (VA-SiNW) oligomer arrays coated with Au nanoparticle (NP) monolayers via a combination of colloidal lithography, metal-assisted chemical etching, and directed NP assembly. Arrays of SiNW monomers (i.e., isolated NWs), dimers, and tetramers are synthesized, decorated with AuNPs, and tested for their performance in surface-enhanced Raman spectroscopy. The ∼20 nm AuNPs easily enter within the ca. 40 nm gaps of the SiNW oligomers, thus reaching the hot spot region. At 785 nm excitation, the AuNPs@SiNW dimer arrays provide the highest Raman signal, in agreement with electromagnetic simulations showing a high electric field enhancement at the Au/Si interface within the dimer gap region.
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