外推法
插值(计算机图形学)
人工神经网络
计算机科学
人工智能
GSM演进的增强数据速率
机器学习
数学
统计
运动(物理)
作者
Bokyeom Kim,Mincheol Shin
标识
DOI:10.1109/ted.2023.3316635
摘要
In this work, we present a novel physics-informed machine learning (PIML)-based neural-network device modeling that predicts both device performance and spatial physical quantities in real-time. Using cutting-edge technologies such as physics-informed neural network (NN) and physics-informed deep operator networks, our approach suggests interpolation and extrapolation strategies in device physics modeling. Despite being trained with a small number of bias voltages, our model demonstrates remarkable accuracy, with a mean absolute percentage error (MAPE) of 0.12% for predicting potential for interpolation and 0.19% for extrapolation. Our approach can be used for data-efficient NN modeling for TCAD and real-time physics analysis in the spatial domain.
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