单层
压电
材料科学
杰纳斯
硫系化合物
三元运算
平面(几何)
凝聚态物理
反射(计算机编程)
压电系数
光电子学
纳米技术
复合材料
物理
几何学
计算机科学
数学
程序设计语言
作者
Abdulrahman Mallah,M. Debbichi,Mohamed Houcine Dhaou,Bilel Bellakhdhar
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2023-01-10
卷期号:13 (1): 126-126
被引量:15
标识
DOI:10.3390/cryst13010126
摘要
In the present work, the noncentrosymmetric 2D ternary Janus monolayers Al2XX’(X/X’ = S, Se, Te and O), Si2XX’(X/X’ = P, As, Sb and Bi), and A2PAs(A = Ge, Sn and Pb) have been studied based on first-principles calculations. We find that all the monolayers exhibit in-plane d12, and out-of-plane d13 piezoelectric coefficients due to the lack of reflection symmetry with respect to the central A atoms. Moreover, our calculations show that Al2OX(T = S, Se, Te) chalcogenide monolayers have higher absolute in-plane piezoelectric coefficients. However, the highest out-of-plane values are achieved in the Si2PBi monolayer, larger than those of some advanced piezoelectric materials, making them very promising transducer materials for lightweight and high-performance piezoelectric nanodevices.
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