Near-junction heat dissipation of high-power chips by copper-diamond based heat sink

Nowadays, advanced thermal management materials are considered as the key method to improve the heat dissipation capacity of power devices. However, it is challenging to satisfy the practical requirements with single-component materials. Owing to the excellent properties of high thermal conductivity (TC) and relatively low cost, a Cu-Diamond composite can serve as a promising electronic packaging material. In this work, a near-junction heat dissipation of high-power chips was proposed by a copper-diamond based heat sink through electroplating. The LED chips were treated as the heat source. As the input current increases over time, the reliability of the chips is well preserved, and the working temperatures are maintained below 140 °C. When the input current is 1500 mA for 10 min, the LF is 6768 lm, and the operating temperature is 132 C (4189 lm and 186 C for reference). Ultimately, the temperature distributions of both chips are analyzed through simulation, exhibiting the superior performance of the heat sink. The results demonstrate that the chips bonded on copper-diamond based heat sink is a promising thermal management method to realize near-junction heat dissipation of high-power chips.