Cs3Bi2Br9 Halide Perovskite Nanostructure/Polymer Composite Films Resistive Memory

Emerging as the ideal active layer materials for nonvolatile resistive memories are all-inorganic halide perovskites with high carrier mobility and fast ion migration characteristics. Herein, we introduce a polymethyl methacrylate (PMMA) film between the Al electrode and Cs3Bi2Br9 halide perovskite film to increase the initial resistance value of the device. In addition, it avoids the direct contact between the active electrode and Cs3Bi2Br9 perovskite as well as the introduction of excessive bromine vacancies (VBr) defects, suppresses the generation of metal halides and large-size VBr conductive filaments, enhances the cycling stability of the device, and prolongs the retention time. Among them, polymeric perovskite composite devices with moderate concentrations have a long retention time of 104 s, stable durability, and a small transition voltage of 0.9 V/–0.31 V. Furthermore, the device can also be utilized in three-person voting systems and logic circuits like “AND” and “OR” gates.