石墨烯
掺杂剂
拉曼光谱
X射线光电子能谱
材料科学
氮气
兴奋剂
石墨烯纳米带
纳米技术
化学工程
化学
光电子学
有机化学
光学
物理
工程类
作者
Navid Solati,Sonia Mobassem,Abdullah Kahraman,Hirohito Ogasawara,Sarp Kaya
标识
DOI:10.1016/j.apsusc.2019.07.260
摘要
Despite significant methodical improvements in the synthesis of N-doped graphene, there are still unsolved questions regarding the control of content and the configuration of nitrogen species in graphene honeycomb network. A cross-examination of X-ray photoelectron spectroscopy and Raman spectroscopy findings indicates that the nitrogen dopant amount is graphene thicknesses dependent, but the various nitrogen dopant coordination can be obtained on both double- and few-layer graphene. Characteristic defect features (D′) appearing in Raman spectra upon N-doping is sensitive to nitrogen dopant coordination, graphitic-pyridinic/nitrilic species and therefore the doping level can be identified. Pyridinic and nitrilic nitrogen as primary species turn graphene to p-type semiconductor after a mild thermal treatment.
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