磷烯
硅烯
半导体
石墨烯
材料科学
量子隧道
晶体管
异质结
场效应晶体管
泄漏(经济)
光电子学
工程物理
纳米技术
电压
电气工程
物理
经济
宏观经济学
工程类
作者
Manishkumar Chhowalla,Debdeep Jena,Hua Zhang
标识
DOI:10.1038/natrevmats.2016.52
摘要
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors. Field-effect transistors (FETs) with semiconducting channels made from 2D materials are known to have fewer problems with short-channel effects than devices comprising 3D semiconductors. In this Review, a mathematical framework to evaluate the performance of FETs is outlined with a focus on the properties of 2D materials, such as graphene, transition metal dichalcogenides, phosphorene and silicene.
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