Hall-effect mobility enhancement of sputtered MoS2 film by sulfurization even through Al2O3 passivation film simultaneously preventing oxidation

Abstract An aluminum oxide (Al 2 O 3 ) passivation film that prevents the oxidation of a sputtered and sulfurized molybdenum disulfide (MoS 2 ) film was investigated for an enhancement of the Hall-effect mobility. A remarkably high Hall-effect electron mobility value of 100 cm 2 V −1 s −1 was achieved using 3 nm passivation film, as compared to 25 cm 2 V −1 s −1 for an as-deposited MoS 2 film, because sulfurization is able to be yielded even through the Al 2 O 3 film into the MoS 2 film.