充电顺序
凝聚态物理
材料科学
薄膜
交换偏差
纳米技术
电荷(物理)
物理
磁化
磁各向异性
量子力学
磁场
作者
Xiaohong Liu,W. Liu,Zhidong Zhang,C. F. Chang
摘要
We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the exchange bias field is substantially enhanced because of a sharp increase in magnetocrystalline anisotropy constant from high-temperature cubic to lowtemperature monoclinic structure. Moreover, with respect to the Fe3O4 (40 nm)/MgO (001) thin film, the coercivity field of the CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) bilayer is greatly increased for all the temperature range, which would be due to the coupling between Co spins and Fe spins across the interface.
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