Optimization of absorption layer in InGaAs/InP uni-traveling carrier photodiode

In this paper, we build a two-dimensional (2D) simulation model of step doping InGaAs/InP uni-traveling carrier photodiode (UTC-PD) by TCAD and also compare its performance with PIN photodiode (pin-PD). The effect of doping concentration of the step doping absorption layer on the device performance is analyzed. As the doping concentration increases, the saturation photocurrent increases, but the 3-dB bandwidth decreases.