光电探测器
钙钛矿(结构)
材料科学
光电流
光电子学
氧化铟锡
单层
光电导性
结晶
铟
氧化物
纳米技术
接口(物质)
载流子
载流子寿命
电子迁移率
工作(物理)
薄膜
作者
Jiarui Zhang,Rui Gao,Chi Ma,Jun Dai
摘要
Perovskite photodetectors have garnered considerable attention owing to their exceptional optoelectronic properties and their promising potential for flexible, high-performance device applications. However, their practical implementation remains limited by poor interfacial quality, high defect densities, and suboptimal carrier dynamics. Here, a self-assembled monolayer of [2-(9H-carbazol-9-yl)ethyl]phosphonic acid was employed to modify an indium tin oxide substrate, aiming to simultaneously enhance perovskite crystallization and charge transport in p–i–n-type perovskite photodetectors. With this surface modification, the optimized device exhibits a significantly enhanced performance, including 15 718%, 2624%, and 27.5% improvements in detectivity, photocurrent density, and response time, respectively. This work offers valuable insights and guidance for improving the performance of perovskite photodetectors through interface engineering.
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