互调
材料科学
波导管
表面粗糙度
绝缘体(电)
表面光洁度
光电子学
金属绝缘体金属
金属
表面波
光学
复合材料
电气工程
工程类
物理
放大器
CMOS芯片
冶金
电压
电容器
作者
C. Vicente,H.L. Hartnagel
标识
DOI:10.1109/tmtt.2005.852771
摘要
A new model is presented for the calculation of passive intermodulation (PIM) in waveguide connections. The model considers the roughness of interconnecting waveguide surfaces and the presence of an insulator layer (oxide and contaminants) on these metal surfaces. This results in the generation of a contact resistance, which can excite the PIM level. In particular, the case in which metal-insulator-metal regions are the PIM source is especially investigated. The intermodulation level response is calculated for different waveguide junction parameters like applied mechanical load, surface finish, or metal properties showing qualitative agreement with the measured data published by previous authors.
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