Simulation of high performance GaN/InGaN heterojunction phototransistor

In this paper, we report a two-dimension(2D) simulation of high performance GaN/In_0.03Ga_0.97N/GaN heterojunction phototransistor(HPT) by Silvaco TCAD and provide a direction for the optimization of GaN/InGaN HPTs. The dark current variation with the change of base parameter is studied in detail, it is found that the device with lower base doping has lower punch-through voltage. The thinner base will also reduce the punch-through voltage. The dark current at breakdown point can be affected by the base carrier concentration and the thickness.