化学
带隙
单斜晶系
电子能带结构
价(化学)
准费米能级
电子结构
平面波
原子轨道
导带
原子物理学
半金属
凝聚态物理
分子物理学
晶体结构
结晶学
计算化学
物理
量子力学
电子
有机化学
作者
Shigenori Matsushima,Hiroyuki Nakamura,M. Arai,Chao‐Nan Xu
出处
期刊:Chemistry Letters
[Oxford University Press]
日期:2002-07-01
卷期号:31 (7): 700-701
被引量:12
摘要
Abstract The electronic structure of strontium aluminate, SrAl2O4, is calculated by using the scalar-relativistic full potential linearized augmented plane wave (FLAPW) method. SrAl2O4 is predicted to be an indirect-gap material, since the valence band maximum locates near Z point and the conduction band minimum at Γ point. The valence band with the width ca. 5.3 eV is mainly constructed from O 2p orbitals, where Al 3s3p and Sr 5s5p slightly hybridize with O 2p, and the lower conduction band from Sr 5s orbitals.
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