钝化
材料科学
悬空债券
非晶硅
硅
降级(电信)
退火(玻璃)
光电子学
太阳能电池
紫外线
载流子寿命
晶体硅
纳米技术
图层(电子)
复合材料
电子工程
工程类
作者
P. Yang,Shehroz Razzaq,Ruyi Jiao,Yuting Hu,Lin Liu,Jiahua Tao
出处
期刊:Journal of solar energy research updates
[Zeal Press]
日期:2023-07-19
卷期号:10: 36-45
被引量:3
标识
DOI:10.31875/2410-2199.2023.10.04
摘要
Abstract: The demand for Silicon heterojunction solar cells (HJT) has significantly grown recently. These solar cells have gained recognition for their remarkable performance, which can be attributed to the exceptional passivation properties of bilayers consisting of intrinsic and doped hydrogenated amorphous silicon. This study investigates alternative recovery methods and looks into the deterioration caused by UV radiation in commercial Silicon HJT solar cells. The carrier lifetimes of the samples were measured before and after the HJT solar cells were exposed to ultraviolet radiation. The findings revealed a decrease in carrier lifetime, iVoc, and iFF, indicating the creation of defects in the bulk of a-Si:H and the interface between c-Si and a-Si:H. It was assessed how SiOx performed as a passivation layer. It has been discovered that SiOx can passivate dangling bonds, increase carrier lifetime and reduce trap density. In addition, recovery techniques like current injection, infrared, light soaking, and annealing were applied. The current injection, infrared, and light soaking treatments were discovered to be able to partially restore the efficiency of the solar cells without the combination of temperature, while annealing was found to be more effective. Additionally, the effects of both short and prolonged exposure to UV are investigated. The HJT solar cells exposed to prolonged UV radiation for an extended period of time could not fully regain their efficiency and displayed irreparable flaws. Overall, this study demonstrates the potential of recovery treatments and passivation techniques in increasing the efficiency of Si HJT solar cells and illuminates the processes underlying ultraviolet-induced deterioration. Overall, this study sheds light on ultraviolet-induced degradation mechanisms and highlights the potential of recovery treatments and passivation techniques in enhancing the efficiency of Si HJT solar cells.
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