材料科学
钙钛矿(结构)
结晶
卤化物
二极管
光电子学
分子
光致发光
量子产额
实现(概率)
发光二极管
化学物理
接口(物质)
量子效率
量子
电荷密度
纳米技术
电荷(物理)
产量(工程)
桥(图论)
桥接(联网)
能量转换效率
动力学
带隙
作者
Mubing Yu,Ting‐Xiao Qin,Gang Gao,Junming Qiu,Dengke Wang,Bin Xu,Dongming Zhang,Zhaoyu Chen,Yong Hua,Hong Zhang,Xiaoliang Zhang,Yong‐Biao Zhao,Jiaqi Zhu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-11-04
卷期号:19 (45): 39181-39191
被引量:1
标识
DOI:10.1021/acsnano.5c12388
摘要
Deep-blue perovskite light-emitting diodes (PeLEDs) based on reduced-dimensional perovskites (RDPs) have suffered from unbalanced charge injections and uncontrolled crystallization kinetics processes, impeding the realization of high-performance PeLEDs. In this work, an interfacial chemical molecular bridge was implemented between the RDP and poly(9-vinylcarbazole) (PVK) hole transporting layer to engineer the interfacial electrical environment. The results reveal that the bridging molecule exhibits a strong interface reaction with PVK, facilitating hole injection and improving energy level alignment. Simultaneously, the molecular bridge regulates RDP crystallization dynamics, which inhibits the formation of halide clusters as well as small-n phases and improves defect renovation at the buried interface. As a result, the optimized RDP films exhibit a high photoluminescence quantum yield (PLQY) of 71.69% at 447 nm. The modified PeLEDs deliver an external quantum efficiency (EQE) of 4.48%, along with spectrally stable deep-blue electroluminescence.
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