Magnetization switching and detection by PtxSn1−x alloys

We present spin–orbit torque (SOT) field free magnetization switching and the detection of magnetization at room temperature using Pt and Sn alloys. Observations of the planar Hall effect and weak antilocalization provide evidence of topological features present in the PtSn4. The figures of merit of the spin-torque efficiency and spin-to-charge conversion (SCC) were estimated to be as large as 0.31 ± 0.02 and 0.47 ± 0.08, respectively, in Pt1Sn1. High SOT efficiency, large SCC signal, low magnetization switching current density, and industry compatibility for large-scale production have led to the application of PtxSn1−x alloys in magnetic memory and logic devices.