材料科学
选择(遗传算法)
溶剂
对偶(语法数字)
光电子学
化学物理
纳米技术
计算机科学
有机化学
艺术
化学
物理
文学类
人工智能
作者
Jeong‐Beom Kim,Sung‐Cheon Kang,Seunghwan Lee,Eun‐Young Choi,Jang‐Kun Song
标识
DOI:10.1002/adom.202500172
摘要
Abstract In inverted quantum dot light‐emitting diodes (QLEDs), the energy barrier for holes from the anode is significantly larger than that for electrons from the cathode. This barrier disparity is a major challenge, leading to low efficiency in inverted QLEDs. To address this issue, dual hole transport layers (HTLs) made of the same material, poly(N‐vinyl carbazole) (PVK), but with different molecular assembly structures are introduced. These structures are achieved using two solvents with a large boiling‐point gap: 1,4‐dioxane (1,4‐D) and gamma‐valerolactone (GVL). The PVK film fabricated using GVL with a higher boiling point exhibits better‐ordered and denser molecular assembly compared to that fabricated using 1,4‐D. The highest occupied molecular orbital levels of the two PVK layers are stepwise, attributed to their distinct molecular assembly structures. Consequently, a device with dual HTLs demonstrates over 40% improvement in external quantum efficiency and power efficiency compared to a device with a single HTL. This result provides a novel approach to tuning the energy levels of functional layers in QLEDs, significantly enhancing device performance.
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