Plasma-Induced Particle Generation from UV Tape in D2W Hybrid Bonding: Mechanistic Insights

Hybrid bonding technology has become pivotal for semiconductor device miniaturization, enabling high-density interconnects and heterogeneous integration through die-to-wafer (D2W) architectures. This study identifies previously unrecognized particulate contamination during plasma activation, originating from UV tapes — a critical carrier material in D2W hybrid bonding. This work systematically investigates plasma-induced particle generation from UV tapes by employing X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), atomic force microscopy (AFM), and particle density quantification. Results reveal a 1282-fold increase in sub-0.3 μm particle count post-plasma activation, attributed to the disruption of weak molecular interactions (e.g., Van der Waals force) in short-chain polymers within the adhesive layer. Plasma treatment further degrades the tape’s thermal stability (9.5°C reduction in decomposition temperature) and induces surface roughening (Rq: 0.619 nm vs. 7.60 nm). The plasma-induced degradation mechanisms in UV tapes that compromise bonding quality and yield in multilayer stacking applications. By identifying this mechanism, the study provides critical insights for optimizing UV tape materials and plasma parameters, indirectly providing guidance for yield improvements in advanced D2W hybrid bonding processes.