异质结
石墨烯
范德瓦尔斯力
材料科学
电催化剂
密度泛函理论
兴奋剂
氢
纳米技术
化学物理
催化作用
电化学
化学
光电子学
计算化学
物理化学
分子
电极
生物化学
有机化学
作者
Sushant Kumar Behera,Pritam Deb,Arghya Ghosh
标识
DOI:10.1002/slct.201700323
摘要
Abstract Improved efficiency of N‐doped graphene in van der Waals heterostructure (vdW) for hydrogen evolution reaction (HER) can complement future hydrogen economy. The local electronic environment of layered graphene/MoS 2 interface is significantly influenced by doping with foreign atoms. Moreover, electrochemical robust hydrogen evolution at basal planes of vdW heterostructure and the underneath atomic‐scale reaction mechanism is yet to be realised. We have investigated the mechanism of substitutional N‐doping and its catalytic efficiency towards HER process on the basis of density functional theory. By analysing the electronic structure, free‐energy diagrams, Volmer reaction paths and volcano plot analysis, it is inferred that nitrogen doping on graphene layer significantly modulate the hydrogen binding energies resulting in numerous orders of magnitude enhancement in HER activity. This study shows an optimal way to tune hydrogen binding on graphene/MoS 2 heterostructure, an efficient electrocatalyst tending towards the value gained by platinum.
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