材料科学
铁磁性
合金
空位缺陷
兴奋剂
形状记忆合金
磁性形状记忆合金
凝聚态物理
冶金
磁畴
磁场
磁化
光电子学
量子力学
物理
作者
Hamid Reza Hedayati,Parviz Kameli,A. Ghotbi Varzaneh,Saeideh Jannati,Hadi Salamati
标识
DOI:10.1016/j.intermet.2016.11.008
摘要
Abstract In this work, the effects of Sn vacancy and excess Sn doping on the structural, magnetic and electrical properties of Ni 47 Mn 40 Sn 13±x (x = 0, 0.5, 1) ferromagnetic shape memory alloys were investigated. X-ray diffraction pattern of the Ni 47 Mn 40 Sn 13±x alloys indicated austenitic phase with L2 1 structure for x = 0. However, with increasing Sn vacancy, the coexistence of austenitic and martensitic phases was obtained, while all the compounds of the Ni 47 Mn 40 Sn 13+x were in the austenitic phase at room temperature. By creating Sn vacancy and excess Sn doping, the martensitic transformation (MT) temperature decreased and Curie temperature of austenite ( T c A ) did not show a significant change. In addition, the electrical resistivity behaviors of all the samples revealed a good agreement with AC susceptibility measurements. The decrease of the MT temperature with the increase of Sn vacancy and excess Sn doping was also discussed on the basis of the valence electron concentration and cell volume variation.
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