Designing Resists for Nanoimprint Lithography Enabling Functional Patterning †

Comprehensive Summary Nanoimprint Lithography (NIL) stands as a high‐efficiency patterning technique capable of sub‐diffraction resolution by replicating nanostructures from a mold. The performance of its core functional material, the NIL resist, critically governs the resolution and quality of the imprinted nanostructures. This review systematically explores functional patterning through resist design for nanoimprinting. It begins with an in‐depth comparison of the two primary lithography material systems: thermal NIL (T‐NIL) resists, which rely on thermoplastic flow or thermosetting crosslinking, and ultraviolet NIL (UV‐NIL) resists, driven by UV‐induced photopolymerization. The discussion encompasses their chemical compositions (including resins like epoxies, acrylates, and vinyl ethers), imprint mechanisms, advantages, and limitations. Subsequently, recently developed functional resist materials are examined, highlighting innovations in resins, crosslinking chemistries, and nanomaterial‐incorporated formulations. The critical applications of functionalized NIL resists in advanced fields are thoroughly discussed. In semiconductor device patterning, optimized resists enable high‐density circuit fabrication. For optical devices, tailored photopolymerization and crosslinking in UV‐NIL resists facilitate precise nanostructure replication for metasurfaces. Biomedical applications leverage biocompatible resists for creating drug delivery systems. Each domain attains enhanced nanostructure fidelity through application‐specific optimization of resist properties. Finally, future development trends for NIL resists are outlined, emphasizing sustainable chemistries, stimuli‐responsive crosslinking, hybrid organic‐inorganic resins, and defect‐minimized resists. Advancements in nanoimprinting lithography are poised to expand patterning capabilities toward sub‐10 nm nanostructures, multifunctional devices, and intelligent manufacturing paradigms. This review serves as a foundational reference for designing next‐generation high‐performance NIL resists and functional patterning strategies. Key Scientists