Advanced particle contamination control in EUV scanners

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUV-compatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus on the latter approach of advanced particle contamination control and will show that we are able to reduce particle contamination towards reticle to a level that is compatible with HVM requirements for sub-10nm node lithography.