蚀刻(微加工)
反应离子刻蚀
等离子体
材料科学
等离子体刻蚀
氮化物
氮化硅
硅
分析化学(期刊)
化学
纳米技术
光电子学
图层(电子)
色谱法
量子力学
物理
作者
C. Reyes-Betanzo,S. A. Moshkalyov,Jacobus W. Swart,A. C. S. Ramos
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2003-02-10
卷期号:21 (2): 461-469
被引量:22
摘要
Results of a comparative study of SiNx, SiO2 and Si etching in high- and low-density O2–N2 based plasmas with small additions of SF6 are presented. Higher selectivities of SiNx etching over both SiO2 (up to 50–70) and Si (up to 20) are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low- and high-density plasma conditions. Possible ways of further optimization of the process are discussed.
科研通智能强力驱动
Strongly Powered by AbleSci AI