与非门
俘获
电荷(物理)
计算机科学
闪光灯(摄影)
闪存
编码(社会科学)
数据保留
炸薯条
计算机硬件
光电子学
电子工程
材料科学
逻辑门
算法
物理
数学
光学
工程类
量子力学
电信
统计
生物
生态学
作者
Fei Wang,Rui Cao,Yachen Kong,Xiaolei Ma,Xuepeng Zhan,Yuan Li,Jiezhi Chen
标识
DOI:10.35848/1882-0786/ab8729
摘要
Abnormal read disturb (RD) has been investigated in three-dimensional (3D) charge-trapping NAND flash memory. Similar to traditional 2D NAND, RD will cause more error bits right after programming. However, after short-time retention, it has weak effects on error bits; more importantly, after long-time retention, a part of error bits can be recovered. With special coding designs in chip characterizations and TCAD simulations, it is concluded that lateral charge migration could be dominant mechanism for abnormal RD, which can be utilized to prolong lifetime of 3D NAND-based memory system for cold storage applications.
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