锭
材料科学
光谱学
单晶
Crystal(编程语言)
晶体生长
分析化学(期刊)
钙钛矿(结构)
大气温度范围
谱线
晶体缺陷
结晶学
化学
冶金
热力学
物理
合金
色谱法
量子力学
天文
计算机科学
程序设计语言
作者
John A. Peters,Zhifu Liu,Michael C. De Siena,Mercouri G. Kanatzidis,Bruce W. Wessels
摘要
Thermally stimulated current (TSC) spectroscopy was used to characterize electronic trap states in the perovskite CsPbCl3 bulk single crystals which are promising for gamma ray detection. The TSC spectra indicate the presence of multiple traps over the temperature range from 80 K to above room temperature. The possible analytical defects identified were VCs and VCl vacancies and Pbi interstitials that have concentrations of the order of 1011−1016 cm−3 and capture cross sections of ∼10−18 cm2. A comparison of crystals grown from different ingots reveals that the concentration of defects in the crystal with an improved growth procedure is about one to four orders of magnitude less than those of a crystal from an earlier growth process. A further reduction and elimination of trap states within the perovskite ingot should lead to crystals with improved mobilities, carrier lifetimes, and detector response characteristics.
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