1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser
作者
Jussi Rautiainen,Antti Härkönen,P. Tuomisto,J. Kontinnen,Lasse Orsila,Mircea D. Guina,O. G. Okhotnikov
出处
期刊：Electronics Letters [Institution of Engineering and Technology] 日期：2007-08-30卷期号：43 (18): 980-981被引量：13
标识
DOI：10.1049/el:20071654
摘要
A 1234 nm GaInNAs/GaAs optically-pumped semiconductor disk laser utilising an intracavity BBO (beta barium borate) crystal for nonlinear frequency conversion is reported. 1 W of power at 617 nm has been achieved.
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