Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.